? 2013 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c -100 v v dgr t j = 25 c to 150 c, r gs = 1m -100 v v gss continuous 15 v v gsm transient 25 v i d25 t c = 25 c (chip capability) - 210 a i lrms lead current limit, rms -160 a i dm t c = 25 c, pulse width limited by t jm - 800 a i a t c = 25 c -100 a e as t c = 25 c3j dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 1040 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-264) 1.13/10 nm/lb.in. f c mounting force (plus247) 20..120 /4.5..27 n/lb. weight to-264 10 g plus247 6 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a -100 v v gs(th) v ds = v gs , i d = - 250 a - 2.5 - 4.5 v i gss v gs = 15v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v - 25 a t j = 125 c - 300 a r ds(on) v gs = -10v, i d = 0.5 ? i d25 , note 1 7.5 m ixtk210p10t IXTX210P10T v dss = - 100v i d25 = - 210a r ds(on) 7.5m t rr 200ns ds100397a(01/13) p-channel enhancement mode avalanche rated fast intrinsic rectifier g = gate d = drain s = source tab = drain plus247 (ixtx) tab g d s to-264 (ixtk) s g d tab trenchp tm power mosfets features z international standard packages z high current handling capability z avalanche rated z extended fbsoa z fast intrinsic recitifier z low r ds(on) and q g advantages z easy to mount z space savings z high power density applications z high-side switching z push pull amplifiers z dc choppers z automatic test equipment z current regulators z battery charger applications preliminary technical information
ixtk210p10t IXTX210P10T ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = - 60a, note 1 90 150 s c iss 69.5 nf c oss v gs = 0v, v ds = - 25v, f = 1mhz 4070 pf c rss 1100 pf t d(on) 90 ns t r 98 ns t d(off) 165 ns t f 55 ns q g(on) 740 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 200 nc q gd 155 nc r thjc 0.12 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v - 210 a i sm repetitive, pulse width limited by t jm - 840 a v sd i f = -100a, v gs = 0v, note 1 -1.4 v t rr 200 ns q rm 930 nc i rm 12.4 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) i f = -105a, -di/dt = -100a/ s v r = -100v, v gs = 0v terminals: 1 - gate 2 - drain 3 - source plus247 tm outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain 3 - source 4 - drain millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. to-264 aa outline preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2013 ixys corporation, all rights reserved ixtk210p10t IXTX210P10T fig. 1. output characteristics @ t j = 25oc -220 -200 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 v ds - volts i d - amperes v gs = -10v - 8v - 7v - 4 v - 5 v - 6 v fig. 2. extended output characteristics @ t j = 25oc -400 -350 -300 -250 -200 -150 -100 -50 0 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 v ds - volts i d - amperes v gs = -10v - 5 v - 6 v - 7 v - 4 v fig. 3. output characteristics @ t j = 125oc -220 -200 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 -2.4 -2 -1.6 -1.2 -0.8 -0.4 0 v ds - volts i d - amperes v gs = -10v - 8v - 7v - 4v - 6v - 5 v fig. 4. r ds(on) normalized to i d = -105a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = - 210a i d = -105a fig. 5. r ds(on) normalized to i d = -105a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -350 -300 -250 -200 -150 -100 -50 0 i d - amperes r ds(on) - normalized v gs = -10v t j = 25oc t j = 125oc fig. 6. maximum drain current vs. case temperature -180 -160 -140 -120 -100 -80 -60 -40 -20 0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes external lead current limit
ixtk210p10t IXTX210P10T ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance -300 -250 -200 -150 -100 -50 0 -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 -3.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 50 100 150 200 250 300 -300 -250 -200 -150 -100 -50 0 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode -350 -300 -250 -200 -150 -100 -50 0 -1.4 -1.3 -1.2 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 100 200 300 400 500 600 700 q g - nanocoulombs v gs - volts v ds = - 50v i d = -105a i g = -1ma fig. 11. capacitance 1,000 10,000 100,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mh z c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 1 10 100 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1ms 100s r ds(on) limit 10ms dc - - -- - - - 100ms external lead current limit
? 2013 ixys corporation, all rights reserved ixtk210p10t IXTX210P10T fig. 14. resistive turn-on rise time vs. drain current 80 90 100 110 120 -100 -95 -90 -85 -80 -75 -70 -65 -60 -55 -50 i d - amperes t r - nanoseconds r g = 1 ? , v gs = -10v v ds = - 50v t j = 25oc t j = 125oc fig. 16. resistive turn-off switching times vs. junction temperature 40 45 50 55 60 65 70 75 80 85 90 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 120 140 160 180 200 220 240 260 280 300 320 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = -10v v ds = - 50v i d = -100a i d = - 50a fig. 17. resistive turn-off switching times vs. drain current 100 140 180 220 260 300 -100 -95 -90 -85 -80 -75 -70 -65 -60 -55 -50 i d - amperes t f - nanoseconds 40 50 60 70 80 90 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = -10v v ds = - 50v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 70 80 90 100 110 120 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = -10v v ds = - 50v i d = - 50a i d = -100a fig. 18. resistive turn-off switching times vs. gate resistance 0 100 200 300 400 500 12345678910 r g - ohms t f - nanoseconds 0 200 400 600 800 1000 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = -10v v ds = - 50v i d = - 50a i d = -100a fig. 15. resistive turn-on switching times vs. gate resistance 0 50 100 150 200 250 300 350 12345678910 r g - ohms t f - nanoseconds 0 100 200 300 400 500 600 700 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = -10v v ds = - 50v i d = - 50a i d = -100a
ixtk210p10t IXTX210P10T ixys reserves the right to change limits, test conditions, and dimensions. ixys ref: t_210p10t(a9) 10-18-11 fig. 19. maximum transient thermal impedance 0.0001 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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